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| inchange semiconductor isc product specification isc silicon npn power transistor 2sC5803 description high breakdown voltage- : v cbo = 1500v (min) high switching speed wide area of safe operation applications designed for high voltage color display horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current- continuous 12 a i cm collector current- peak 24 a p c collector power dissipation @ t c =25 70 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2sC5803 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 2a b 3.0 v v be (sat) base-emitter saturation voltage i c = 8a; i b = 2a b 1.5 v i ces collector cutoff current v ce = 1400v; v be = 0 1.0 ma i cbo collector cutoff current v cb = 800v; i e = 0 10 a i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 15 40 h fe-2 dc current gain i c = 8a; v ce = 5v 5.5 8.5 switching times t stg storage time 4.0 s t f fall time i c = 7a, i b1 = 1.4a; i b2 = -2.8a; v cc = 200v; rl= 28.6 0.3 s isc website www.iscsemi.cn 2 www.iscsemi.cn |
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